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Superb framework for dissecting the three-way race in advanced node capacity. Your point about Samsung entering the strongest memory upcycle since 2018 via HBM is crucial but often understated. The real insight here is recognizing that HBM isn't just another memory product, it's a structural shift in how AI infrastructure scales bandwidth ahead of compute. If Samsung closes even 70% of the gap with SK hynix on HBM3E/4 qualification, their operating leverage could surprise consensus materially by H2 2026. What I find especially compelling is your technical overlay on Intel's B-wave structure.That 36.80-38.20 retracement zone you've outlined captures exactly the kind of risk-defined entry that prevents getting shaken out of a fragile but potentially valid turnaround. The key variable remains whether 18A can attract enough external foundry customers to justify the capex burn. If not, the entire IDM 2.0 thesis unravels regardless of how strong Xeon 6 performs.

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